document number 3095 issue 1 2N6796 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. tmos fet enhancement n - channel features ?v (br)dss = 100v i d = 8a r dson = 0.18 ? ? v ds drain?source voltage v dgr drain?source voltage (r gs = 1.0 m ?) v gs gate?source voltage i d drain current continuous t case = 25c i dm drain current pulsed p d total device dissipation @ t case = 25c derate above 25c t j , t stg operating and storage junction temperature range thermal characteristics r jc thermal resistance junction to case r ja thermal resistance junction to ambient t l maximum lead temperature 1.6mm from case for 10 secs. 100v 100v 20v 8.0a 32a 25w 0.2w/c ?55 to +150c 5.0c/w 175c/w 300c mechanical data dimensions in mm (inches) to?39 package (to-205af) absolute maximum ratings (t case = 25c unless otherwise stated) pin 1 ? source underside view pin 2 ? gate pin 3 ? drain 0.89 (0.035) max. 12.70 (0.500) min. 4.06 (0.16) 4.57 (0.18) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 0.41 (0.016) 0.53 (0.021) dia. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2.54 (0.100) 5.08 (0.200) typ. 45 1 2 3
document number 3095 issue 1 2N6796 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. parameter test conditions min. typ. max. unit v (br)dss drain ? source breakdown voltage v gs(th) gate thresshold voltage 1 i gss gate ? body leakage i dss zero gate voltage drain current r ds(on) drain ? source on ? resistance 1 v ds(on) drain ? source on ? voltage 1 gf s forward transconductance 1 c iss input capacitance c oss output capacitance c rss reverse transfer capacitance t d(on) turn ? on delay time 1 t r risetime 1 t d(off) turn off delay time 1 t f falltime 1 v sd diode forward voltage 1 t on forward turn ontime 1 t rr reverse recovery time 1 v gs = 0 i d = 0.25ma v ds =v gs i d = 0.5ma v ds = 0 v gs = 20v v ds = rated v dss v gs = 0v t j = 125 c v gs = 10v i d = 5.0a t a = 125 c v gs = 10v i d = 8.0a v gs = 15v i d = 5.0a v ds = 25v v gs = 0 f = 1.0mh z v dd = 30v r gen = 50 ? i d = 5.0a r g = 7.5 ohms i s = rated i d(on) v gs = 0 100 2.0 4.0 100 250 1000 0.18 0.35 1.56 3.0 9.0 350 900 150 500 50 150 30 75 40 45 5.5 negligible 300 v na a ? v s( ) pf ns v ns electrical characteristics (t j = 25 c unless otherwise stated) 1) pulse test : pulse width < 300 s ,duty cycle < 2% 2) pulse width limited by maximum juction temperature source drain diode rating characteristics ?
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